Method for controlling conductivity of Ga2O3single crystal

ABSTRACT

To provide a method of controlling a conductivity of a Ga 2 O 3  system single crystal with which a conductive property of a β-Ga 2 O 3  system single crystal can be efficiently controlled. 
     The light emitting element includes an n-type β-Ga 2 O 3  substrate, and an n-type β-AlGaO 3  cladding layer, an active layer, a p-type β-AlGaO 3  cladding layer and a p-type β-Ga 2 O 3  contact layer which are formed in order on the n-type β-Ga 2 O 3  substrate. A resistivity is controlled to fall within the range of 2.0×10 −3  to 8×10 2  Ωcm and a carrier concentration is controlled to fall within the range of 5.5×10 15  to 2.0×10 19 /cm 3  by changing a Si concentration within the range of 1×10 −5  to 1 mol %.

TECHNICAL FIELD

The present invention relates to a method of controlling a conductivityof a Ga₂O₃ system single crystal, and more particularly to a method ofcontrolling a conductivity of a Ga₂O₃ system single crystal with which aconductive property of a Ga₂O₃ system single crystal can be efficientlycontrolled.

BACKGROUND ART

A light emitting element in an ultraviolet region is greatly expectedespecially in realization of a mercury free fluorescent lamp, a photocatalyst providing a clean environment, a DVD of the new generationrealizing higher density recording, and the like. From such abackground, a GaN blue light emitting element is realized (for example,refer to a patent document 1).

The patent document 1 describes a light emitting element including asapphire substrate, a buffer layer formed on the sapphire substrate, ann-type cladding layer formed of an n-type gallium nitride compoundsemiconductor layer and formed on the buffer layer, a non-doped activelayer, a p-type cladding layer formed of a p-type gallium nitridecompound semiconductor layer, and a p-type contact layer having a highcarrier concentration. This conventional GaN blue light emitting elementemits a light having an emission wavelength of 370 nm.

Patent document 1: Japanese Patent No. 2778405 (FIG. 1)

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

However, with the conventional GaN blue light emitting element, it isdifficult to obtain a light emitting element which emits a light in anultraviolet region having a shorter wavelength due to a band gap.

Then, in recent years, β-Ga₂O₃ has been expected as a material which mayemit a light in an ultraviolet region because it has a larger band gap.A β-Ga₂O₃ bulk single crystal is obtained by utilizing a floating zone(FZ) method, and can be utilized as a semiconductor through waferprocessing. The β-Ga₂O₃ bulk single crystal obtained by utilizing the FZmethod shows an n-type conductive property.

Now, in the case where the Ga₂O₃ system single crystal is used in theform of a substrate or thin film, it is necessary to control aresistivity of the Ga₂O₃ system single crystal when a conductiveproperty is required. However, heretofore, it has been difficult towidely control the resistivity because even if not being intentionallydoped with an impurity, a substrate or thin film made of the Ga₂O₃system single crystal has shown the n-type conductive property.

On the other hand, in spite of necessity for a high insulating property,conventionally, it has been difficult to make a substrate or thin filmmade of the Ga₂O₃ system single crystal having a high insulatingproperty. Thus, in order to enhance the insulating property by reducingan oxygen-defect concentration, for example, it has been necessary toperform annealing at 900° C. for six days in the air.

Therefore, it is an object of the present invention to provide a methodof controlling a conductivity of a Ga₂O₃ system single crystal withwhich a conductive property of the Ga₂O₃ system single crystal can beefficiently controlled.

Moreover, it is another object of the present invention to provide amethod of controlling a conductivity of a Ga₂O₃ system single crystalwith which the Ga₂O₃ system single crystal having a high insulatingproperty can be made.

Means for Solving Problem

In order to attain the above-mentioned objects, the present inventionprovides a method of controlling a conductivity of a Ga₂O₃ system singlecrystal, characterized in that: a desired resistivity is obtained byadding a predetermined dopant to the Ga₂O₃ system single crystal.

The predetermined dopant is preferably a group IV element whichdecreases a resistance of the Ga₂O₃ system single crystal.

The group IV element is preferably Si, Hf, Ge, Sn, Ti or Zr.

A value of 2.0×10⁻³ to 8.0×10² Ωcm is preferably obtained as the desiredresistivity by adding a predetermined amount of group IV element.

A carrier concentration of the Ga₂O₃ system single crystal is preferablycontrolled to fall within a range of 5.5×10¹⁵ to 2.0×10¹⁹/cm³ as a rangeof the desired resistivity.

The predetermined dopant is preferably a group II element whichincreases a resistance of the Ga₂O₃ system single crystal.

The group II element is preferably Mg, Be or Zn.

1×10³ Ωcm or more is preferably obtained as the desired resistivity byadding a predetermined amount of group II element.

EFFECTS OF THE INVENTION

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, it is found out that an n-type conductive property isgiven by Si which is contained as an impurity in a process for growing asubstrate or thin film made of the Ga₂O₃ system single crystal. Hence,the Ga₂O₃ system single crystal can be highly purified by removing Si,which makes it possible to change a resistivity in correspondence to aconcentration of dopant added.

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, Si, Hf, Ge, Sn, Ti or Zr as the group IV element is usedas the dopant. Hence, substitution of Ga for such a group IV elementmakes it possible to form a substrate or thin film showing an n-typeconductivity.

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, it is possible to make a low-resistance substrate orthin film having a resistivity of 2.0×10⁻³ to 8.0×10² Ωcm as a desiredresistivity. Hence, this low-resistance substrate or thin film can beused as any of substrates or thin films of the various light emittingelements.

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, the carrier concentration of the Ga₂O₃ system singlecrystal can be controlled to fall within the range of 5.5×10¹⁵ to2.0×10¹⁹/cm³, and thus can be set to desired one. As a result, it ispossible to unify the electrical characteristics of the light emittingelements.

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, Mg, Be or Zn as the group II element can be used as thedopant, and thus the Ga₂O₃ system single crystal can be readily made tohave the insulating property. As a result, the Ga₂O₃ system singlecrystal can be used in any of applications each requiring the insulatingproperty.

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal, it is possible to obtain a Ga₂O₃ system single crystalsubstrate having a high resistivity of 1.0×10³ Ωcm or more as thedesired resistivity by adding the group II element to the Ga₂O₃ systemsingle crystal.

BRIEF DESCRIPTION OF THE DRAWINGS

[FIG. 1] A cross sectional view of a light emitting element according toa first embodiment mode of the present invention.

[FIG. 2] A diagram showing a relationship among a dopant concentration,a carrier concentration and a resistivity when Si is used as an n-typedopant.

[FIG. 3] A cross sectional view of a light emitting element according toa second embodiment mode of the present invention.

DESCRIPTION OF REFERENCE NUMERALS

-   1 light emitting element-   2 n-type β-Ga₂O₃ substrate-   4 transparent electrode-   5 electrode-   6 pad electrode-   8 wire-   9 bonding layer-   37 n-side electrode-   50 n-type β-Ga₂O₃ substrate-   51 n-type AlGaO₃ cladding layer-   52 β-Ga₂O₃ active layer-   53 p-type β-Ga₂O₃ cladding layer-   54 p-type β-Ga₂O₃ contact layer-   55 insulation type β-Ga₂O₃ substrate-   56 n-type β-Ga₂O₃ contact layer-   58 wire-   59 bonding portion-   70 emitted light-   71 luminescent light-   80 printed wiring board-   81 adhesive agent

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 shows a light emitting element according to a first embodimentmode of the present invention. In the light emitting element 1, ann-type β-AlGaO₃ cladding layer 51 showing an n-type conductive property,an active layer 52 made of β-Ga₂O₃, a p-type β-AlGaO₃ cladding layer 53showing a p-type conductive property, and a p-type β-Ga₂O₃ contact layer54, made of a β-Ga₂O₃ single crystal, showing the p-type conductiveproperty are laminated in order on an n-type β-Ga₂O₃ substrate 50, madeof a β-Ga₂O₃ single crystal, showing the n-type conductive property.

In addition, the light emitting element 1 includes a transparentelectrode 4 formed on an upper surface of the p-type β-Ga₂O₃ contactlayer 54, a pad electrode 6 formed on a part of an upper surface of thetransparent electrode 4, and an n-side electrode 37 formed over a lowersurface of the n-type β-Ga₂O₃ substrate 50. The pad electrode 6, forexample, is made of Pt. A wire 8 is bonded to the pad electrode 6through a bonding portion 9. The n-side electrode 37, for example, ismade of Au.

The light emitting element 1 is mounted to a printed wiring board 80through an adhesive agent 81 or a metal paste and is connected to aprinted wiring (not shown).

Here, the p-type β-AlGaO₃ cladding layer 53 and the p-type β-Ga₂O₃contact layer 54 are formed such that a carrier concentration of thep-type β-Ga₂O₃ contact layer 54 becomes higher than that of the p-typeβ-AlGaO₃ cladding layer 53. In addition, similarly, the n-type β-Ga₂O₃substrate 50 and the n-type β-AlGaO₃ cladding layer 51 are formed suchthat a carrier concentration of the n-type β-Ga₂O₃ substrate 50 becomeshigher than that of the n-type β-AlGaO₃ cladding layer 51.

The β-Ga₂O₃ active layer 52 is sandwiched between the n-type β-AlGaO₃cladding layer 51 and the p-type β-AlGaO₃ cladding layer 53, and thusdouble hetero junction is obtained therein. The active layer 52 is madeof β-Ga₂O₃ which has a smaller band gap than that of each of thecladding layers 51 and 53.

This embodiment mode will be described hereinafter.

(1) Making of β-Ga₂O₃ Substrate Showing n-Type Conductivity and Controlfor Conductivity Thereof

In order that the substrate may show an n-type conductive property, ann-type dopant needs to be substituted for Ga contained in the substrate.Si, Hf, Ge, Sn, Ti and Zr are given as gallium substitution n-typedopants any one of which is substituted for Ga.

The substrate showing an n-type conductive property is made as follows.Firstly, a β-Ga₂O₃ single crystal is formed by utilizing the FZ method.That is to say, a β-Ga₂O₃ seed crystal, and a β-Ga₂O₃ polycrystallineraw material containing therein Hf, Si or the like as an n-type dopantare separately prepared. The β-Ga₂O₃ seed crystal and the β-Ga₂O₃polycrystalline raw material are then made to contact each other in asilica tube. Contacting portions of the β-Ga₂O₃ seed crystal and theβ-Ga₂O₃ polycrystalline raw material are then heated to be molten. Whenthe molten β-Ga₂O₃ polycrystalline raw material is crystallized togetherwith the β-Ga₂O₃ seed crystal, the β-Ga₂O₃ single crystal containingtherein Hf or Si as the n-type dopant is made on the β-Ga₂O₃ seedcrystal. Next, the resulting β-Ga₂O₃ single crystal is subjected toprocessing such as cutting, thereby obtaining the substrate showing then-type conductive property which is obtained in accordance with theconductivity control. Here, the β-Ga₂O₃ polycrystalline raw material isused which contains therein Si as an impurity having a lowconcentration, and thus has high purity of, for example, 6N.

A method of controlling a concentration of an n-type dopant containingtherein Hf, Si or the like by utilizing the FZ method is given as amethod of controlling a conductivity of a substrate, made of β-Ga₂O₃,showing the n-type conductive property.

(2) Making of Thin Film Showing n-Type Conductive Property and Controlfor Conductivity Thereof

A thin film showing the n-type conductive property can be formed byutilizing a physical vapor-phase growth such as a Pulsed LaserDeposition (PLD) method, a Molecular Beam Epitaxy (MBE) method, a MetalOrganic Vapor Deposition (MOCVD) method or a sputtering method, or achemical vapor-phase growth such as a thermal Chemical Vapor Deposition(CVD) or a plasma CVD.

Thin film deposition made by utilizing the PLD method will now bedescribed. In order that the thin film may show the n-type conductiveproperty, at least an n-type dopant needs to be substituted for Gacontained in the thin film. Si, Hf, Ge, Sn, Ti and Zr are given asgallium substitution n-type dopants any one of which is substituted forGa.

With regard to a method of doping a thin film with a galliumsubstitution n-type dopant by utilizing the PLD method, there is known amethod using a target including a sintered body of β-Ga₂O₃ and an oxideof an n-type dopant, or a method using a solid solution single crystalof β-Ga₂O₃ and an oxide of an n-type dopant.

With regard to a method of controlling a conductivity of a thin film,made of β-Ga₂O₃, showing an n-type conductive property by utilizing thePLD method, there is known a method of changing a component ratio of anoxide of an n-type dopant to β-Ga₂O₃.

FIG. 2 shows a relationship among a dopant concentration, a carrierconcentration, and a resistivity when Si is used as an n-type dopant.The Si concentration, for example, is changed within the range of 1×10⁻⁵to 1 mol %, which results in that the resistivity takes values in therange of 2.0×10⁻³ to 8×10² Ωcm, and the carrier concentration takesvalues in the range of 5×10¹⁵ to 2.0×10¹⁹/cm³. From this, control forthe dopant concentration makes it possible to change the resistivity andthe carrier concentration. Here, the reason that the low carrierconcentration of 5.5×10¹⁵/cm³ is obtained is because the β-Ga₂O₃polycrystalline raw material having high purity of 6N is used, a systemimplementing the FZ method or PLD method is installed in a so-calledclean room, a clean gas, a clean instrument and the like are used asnecessary ones, and so forth.

It was confirmed that of the n-type dopants described above, especially,each of Hf, Si and Sn shows the satisfactory control property.

(3) Method of Making Thin Film Showing p-Type Conductive Property

A thin film showing a p-type conductive property can be deposited byutilizing the physical vapor-phase growth such as the PLD method, theMBE method or the MOCVD method, or the chemical vapor-phase growth suchas the thermal CVD, or the plasma CVD.

Thin film deposition made by utilizing the PLD method will now bedescribed. In order that the thin film may show the p-type conductiveproperty, a p-type dopant needs to be substituted for Ga contained inthe thin film, a p-type dopant needs to be substituted for oxygencontained in the thin film, or the showing of the p-type conductivityneeds to rely on Ga defects.

H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd,Cu, Ag, Au, Zn, Cd, Hg, Tl, Pb and the like are given as galliumsubstitution p-type dopants any one of which is substituted for Ga. Pand the like are given as oxygen substitution p-type dopants any one ofwhich is substituted for oxygen.

Each of a method of doping a thin film with the gallium substitutionp-type dopant by utilizing the PLD method and a method of doping a thinfilm with the oxygen substitution p-type dopant is a method of doping athin film with a p-type dopant in a thin film growing process. Withregard to a method of doping a thin film with a p-type dopant, thefollowing method is known. That is to say, there is known a method usinga target made of an alloy of Ga and a p-type dopant, a method using atarget including a sintered body of β-Ga₂O₃ and an oxide of a p-typedopant, a method using a target made of a solid solution single crystalof β-Ga₂O₃ and an oxide of a p-type dopant, a method using a target madeof a Ga metal and a target made of a p-type dopant, or the like.

In addition, the thin film showing the p-type conductive propertyrelying on the Ga defects can be made such that it is deposited in anambient atmosphere of N₂O obtained through radicalization by a plasmagun by using a Ga metal, a β-Ga₂O₃ sintered body, or a β-Ga₂O₃ crystal(single crystal or polycrystalline) as a target.

(5) Electrode

An electrode is made of a material with which ohmic contact is obtained.For example, a metal simple substance such as Au, Al, Ti, Sn, Ge, In,Ni, Co, Pt, W, Mo, Cr, Cu or Pb, an alloy containing therein at leasttwo kinds of metal simple substances of them (for example, an Au—Gealloy), a two-layer structure thereof (for example, Al/Ti, Au/Ni, orAu/Co), or ITO is used in the thin film or substrate showing the n-typeconductive property. A metal simple substance such as Au, Al, Be, Ni,Pt, In, Sn, Cr, Ti or Zn, an alloy containing therein at least two kindsof metal simple substances of them (for example, an Au—Zn alloy or anAu—Be alloy), a two layer structure thereof (for example, Ni/Au), or ITOis used in the thin film or substrate showing the p-type conductiveproperty.

The light emitting element according to the first embodiment mode of thepresent invention offers the following effects.

(i) Since the resistivity and the carrier concentration can be changedby controlling the dopant concentration, it is possible to make the thinfilm or substrate having the desired carrier concentration.

(ii) A substrate resistance of the light emitting element 1 becomessmall, which results in reduction of a forward voltage Vf.

(iii) Since the n-type β-Ga₂O₃ substrate 50 has the conductive property,a vertical construction can be adopted such that the electrodes areextracted from upper and lower sides of the substrate. As a result, itis possible to simplify the layer structure and the fabricationprocesses.

(iv) A luminescent light penetrates through the transparent electrode 4to be emitted in the form of the emitted light 70, which is emittedupward, to the outside. In addition thereto, a luminescent light 71which is propagated to the lower surface of the n-type β-Ga₂O₃ substrate50, for example, is reflected by the n-side electrode 37 or the adhesiveagent 81 to be emitted upward. Hence, the luminous intensity increasesas compared with the case where only the emitted light 70 is emitted.

FIG. 3 shows a light emitting element according to a second embodimentmode of the present invention. In the light emitting element 1, ann-type β-Ga₂O₃ contact layer 56, made of a β-Ga₂O₃ single crystal,showing an n-type conductive property, an n-type β-AlGaO₃ cladding layer51, an active layer 52 made of β-Ga₂O₃, a p-type β-AlGaO₃ cladding layer53 showing a p-type conductive property, and a p-type β-Ga₂O₃ contactlayer 54, made of the β-Ga₂O₃ single crystal, showing the p-typeconductive property are laminated in order on an insulation type β-Ga₂O₃substrate 55 made of the β-Ga₂O₃ single crystal.

In addition, the light emitting element 1 includes a transparentelectrode 4 formed on the p-type β-Ga₂O₃ contact layer 54, a padelectrode 6 formed on a part of the transparent electrode 4, and ann-side electrode 37 formed on the n-type β-Ga₂O₃ contact layer 56. Thepad electrode 6, for example, is made of Pt, and a wire 8 is connectedto the pad electrode 6 through a bonding portion 9. The n-side electrode37, for example, is made of Au, and a wire 58 is connected to the n-sideelectrode 37 through a bonding portion 59.

The light emitting element 1 is installed on a printed wiring board 80through an adhesive agent 81 or a metal paste, and is connected to aprinted wiring (not shown) of the printed wiring board 80.

Here, the p-type β-AlGaO₃ cladding layer 53 and the p-type β-Ga₂O₃contact layer 54 are formed such that a carrier concentration of thep-type β-Ga₂O₃ contact layer 54 becomes higher than that of the p-typeβ-AlGaO₃ cladding layer 53. In addition, the n-type β-AlGaO₃ claddinglayer 51 and the n-type β-Ga₂O₃ contact layer 56 are formed such that acarrier concentration of the n-type β-Ga₂O₃ contact layer 56 becomeshigher than that of the n-type β-AlGaO₃ cladding layer 51.

The β-Ga₂O₃ active layer 52 is sandwiched between the n-type β-AlGaO₃cladding layer 51 and the p-type β-AlGaO₃ cladding layer 53 and thusdouble hetero junction is obtained therein. The β-Ga₂O₃ active layer 52is made of β-Ga₂O₃ which has a smaller band gap than that of each of thecladding layers 51 and 53.

(6) Method of Making Insulation Type Substrate

The insulation type substrate is made as follows. Firstly, the FZ methodis utilized similarly to the method of making the substrate showing then-type conductive property. That is to say, a βGa₂O₃ seed crystal, and ahigh-purity β-Ga₂O₃ polycrystalline raw material containing therein Sias an impurity having a low concentration are separately prepared. Theβ-Ga₂O₃ seed crystal and the β-Ga₂O₃ polycrystalline raw materialcontaining therein Mg, Be or Zn as a p-type dopant are then made tocontact each other in a silica tube. Contacting portions of the β-Ga₂O₃seed crystal and the β-Ga₂O₃ polycrystalline raw material are heated tobe molten. When the molten β-Ga₂O₃ polycrystalline raw material iscrystallized together with the β-Ga₂O₃ seed crystal, the β-Ga₂O₃ singlecrystal containing therein Mg is made on the β-Ga₂O₃ seed crystal. Next,the resulting β-Ga₂O₃ single crystal is subjected to the processing suchas the cutting, thereby obtaining the substrate showing an insulatingproperty. Here, when an amount of Mg added was 0.01 mol % and 0.05 mol%, a resistance value of the resulting substrate was 1,000 MΩ or more,and thus the resulting substrate showed the insulating property. Evenwhen Be and Zn were individually added to the β-Ga₂O₃ single crystal,the β-Ga₂O₃ single crystal also showed the insulating property.

According to the second embodiment, the following effects are obtained.

(i) Since the addition of the p-type dopant makes it possible to makethe thin film and the substrate each having the insulating property, itis possible to fabricate the light emitting element which employs theβ-Ga₂O₃ single crystal and which has the MIS structure.

(ii) In this light emitting element 1, the substrate resistance of thelight emitting element 1 becomes small, and thus the forward voltage Vfbecomes small.

(iii) The wide band gap which the β-Ga₂O₃ system single forming theactive layer 52 has allows the light having a short wavelength of, forexample, 260 nm to be emitted.

(iv) Since each of the insulation type β-Ga₂O₃ substrate 55 and then-type β-Ga₂O₃ cladding layer 51 is structured by mainly using β-Ga₂O₃,the buffer layer can be made unnecessary and the n-type layer having theexcellent crystalline can be formed.

(v) Since the insulation type β-Ga₂O₃ substrate 55 has the hightransmission property in the emission region, it is possible to increasethe efficiency of leading out the light.

(vi) A luminescent light penetrates through the transparent electrode 4to be emitted in the form of a light emitted upward to the outside. Inaddition thereto, a luminescent light 71 which is propagated to thelower surface of the insulation type β-Ga₂O₃ substrate 55, for example,is reflected by the adhesive agent 81 to be emitted upward.Consequently, the luminous intensity increases as compared with the casewhere the luminescent light 71 is directly emitted to the outside.

(vii) Since the oxide system β-Ga₂O₃ system single crystal is used ineach of the insulation type β-Ga₂O₃ substrate, and the layers 51, 52, 54and 56, it is possible to fabricate the light emitting element whichstably operates even in the atmosphere at the high temperature.

(viii) Since flip chip bonding becomes possible for a method ofconnecting the light emitting element to the printed wiring board or thelead frame, the heat generated from the emission region can beefficiently discharged to the printed wiring board or to the lead frame.

Although in the first and second embodiment modes, the description hasbeen given with respect to the case where β-Ga₂O₃ is used, any othertype Ga₂O₃ may also be used.

In addition, although in the first and second embodiment modes, thelight emitting element has been described, the present invention canalso be applied to a photo sensor for converting an incident light intoan electrical signal.

In addition, the active layer 52 may also be made of β-GaInO₃. At thistime, the cladding layer may also be made of β-Ga₂O₃. In addition, theactive layer 52 may have a quantum well structure with which theluminous efficiency can be enhanced.

INDUSTRIAL APPLICABILITY

According to the method of controlling a conductivity of a Ga₂O₃ systemsingle crystal of the present invention, the Ga₂O₃ system single crystalcan be highly purified by removing Si, and the resistivity thereof canbe changed in correspondence to a concentration of a dopant added. Thisinvention is utilized in fabrication of the light emitting element.

1. A method of controlling a conductivity of a Ga₂O₃ system singlecrystal, comprising: adding an n-type dopant to the Ga₂O₃ system singlecrystal to change a resistivity of the Ga₂O₃ system single crystalsubstantially linearly with an added amount of the n-type dopant,wherein the n-type dopant comprises one of Zr, Si, Hf, Ge, Sn, and Ti,wherein the Ga₂O₃ system single crystal is prepared with a Ga₂O₃polycrystalline raw material, and wherein the Ga₂O₃ polycrystalline rawmaterial has a purity of 6N.
 2. The method of controlling a conductivityof a Ga₂O₃ system single crystal according to claim 1, wherein a valueof 2.0×10⁻³ to 8.0×10² Ωcm is obtained as the resistivity by said addingsaid n-type dopant.
 3. The method of controlling a conductivity of aGa₂O₃ system single crystal according to claim 2, wherein a carrierconcentration of the Ga₂O₃ system single crystal is controlled to fallwithin a range of 5.5×10¹⁵ to 2.0×10¹⁹ cm³ as a range of theresistivity.
 4. The method of controlling a conductivity of a Ga₂O₃system single crystal according to claim 1, wherein the n-type dopantcomprises one of Si, Hf, and Sn.
 5. The method of controlling aconductivity of a Ga₂O₃ system single crystal according to claim 1,wherein the n-type dopant comprises one of Si and Hf.
 6. A method ofcontrolling a conductivity of a Ga₂O₃ system single crystal, comprising:contacting a Ga₂O₃ polycrystalline raw material comprising apredetermined dopant to a Ga₂O₃ seed crystal; and growing the Ga₂O₃system single crystal on the Ga₂O₃ seed crystal such that saidpredetermined dopant is substituted for Ga in the Ga₂O₃ system singlecrystal to obtain a desired resistivity in the Ga₂O₃ system singlecrystal of 1×10³ Ωcm or greater, wherein said predetermined dopantcomprises a p-type dopant for controlling said conductivity of the Ga₂O₃system single crystal, said p-type dopant comprising one of H, Li, Na,K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au,Zn, Cd, Hg, Tl, and Pb, and wherein said Ga₂O₃ polycrystalline rawmaterial has a purity of 6N.
 7. The method of controlling a conductivityof a Ga₂O₃ system single crystal according to claim 6, wherein saidconductivity of the Ga₂O₃ system single crystal is dependent on an addedamount of said p-type dopant.
 8. A method of manufacturing a Ga₂O₃system single crystal, comprising: adding an n-type dopant to the Ga₂O₃system single crystal, said n-type dopant comprising one of Zr, Si, Hf,Ge, Sn, and Ti; and manufacturing the Ga₂O₃ system single crystal havinga resistivity depending on an added amount of said n-type dopant bychanging the resistivity of the Ga₂O₃ system single crystalsubstantially linearly with the added amount of said n-type dopant,wherein the Ga₂O₃ system single crystal is prepared with a Ga₂O₃polycrystalline raw material, and wherein the Ga₂O₃ polycrystalline rawmaterial has a purity of 6N.
 9. The method of manufacturing a Ga₂O₃system single crystal according to claim 8, wherein said n-type dopantcomprises one of Si, Hf, and Sn.